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| 125×125单晶硅片规格书 | ||
| MONO-CRYSTAL SILICON WAFER SPECIFICATION | ||
| 参数(Parameter) | 数值(Value) | 单位(Unit) |
| 材料类型(Material type) | 单晶(CZ Mono-crystalline Silicon) | |
| 外型(Geometry) | 准方型(Pseudo square wafer) | |
| 晶圆方向(Wafer orientation) | （1-0-0）±2 | Degree |
| 导电类型(Conductivity type) | P-type | |
| 直径(Diameter) | 150±0.5,165±0.5 | mm |
| 尺寸(Dimension) | 125×125±0.5 | mm |
| 掺杂物（Dopant) | B | |
| 电阻率(Resistivity) | 0.5-3.0 | Ω-cm |
| 氧含量(Oxygen content) | ≤1E18 | atom/cm3 |
| 碳含量(Carbon content) | ≤5E16 | atom/cm3 |
| 少子寿命(Lifetime) | ≥10 | µs |
| 方正度(Square angle) | 90±0.5 | degree |
| 厚度(Thickness) | 200±20 | µm |
| 厚度变化(TTV) | ≤25 | µm |
| 弯曲度(Bow/Warp) | ≤50 | µm |
| 表面(Surface) | 线切、表面洁净（As-cut,cleaned) | |
| 表面损伤(Surface damage) | 切痕（Saw mark)≤15 | µm |
| 表面质量(Surface quality) | 不允许有裂纹，明显刀痕，手感不明显，无沾污和异常斑点(No crack,no obvious saw mark,no obvious tactility,no abnormal spot,no stain) | |
| 边缘缺陷(Edge defect) | 切深≤0.5mm, 无尖锐边缘(Depth≤0.5mm,no sharp edge) | |
| 156×156多晶硅片规格书 | ||
| MULTI-CRYSTAL SILICON WAFER SPECIFICATION | ||
| 参数(Parameter) | 数值(Value) | 单位(Unit) |
| 材料类型(Material type) | 多晶/铸锭法(Multi-crystalline Silicon/Casting) | |
| 外型(Geometry) | 方型(Square wafer) | |
| 导电类型(Conductivity type) | P-type | |
| 尺寸(Dimension) | 156×156±0.5 | mm |
| 倒角（Corner) | 2.0±0.5 | mm |
| 掺杂物（Dopant) | B | |
| 电阻率(Resistivity) | 0.5-3.0 | Ω-cm |
| 氧含量(Oxygen content) | ≤8E17 | atom/cm3 |
| 碳含量(Carbon content) | ≤9E17 | atom/cm3 |
| 少子寿命(Lifetime) | ≥2 | µs |
| 方正度(Square angle) | 90±0.5 | degree |
| 厚度(Thickness) | 200±20 | µm |
| 厚度变化(TTV) | ≤30 | µm |
| 弯曲度(Bow/Warp) | ≤75 | µm |
| 表面(Surface) | 线切、表面洁净（As-cut,cleaned) | |
| 表面损伤(Surface damage) | 切痕（Saw mark)≤15 | µm |
| 表面质量(Surface quality) | 不允许有裂纹，明显刀痕，手感不明显，无沾污和异常斑点(No crack,no obvious saw mark,no obvious tactility,no abnormal spot,no stain) | |
| 晶界走向（Grain boundary direction) | 晶界走向与硅片表面垂直（Vertical to wafer surface) | |
| 边缘缺陷(Edge defect) | 切深≤0.5mm, 无尖锐边缘(Depth≤0.5mm,no sharp edge) | |
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